PD -5038
PRELIMINARY
CPV363M4F
Fast IGBT
1 D1 9 4 6 Q2 D2 12 Q4 D4 18 D3 15 10 Q6 D6 D5 16 3 Q1 Q3 Q5
IGBT SIP MODULE...
PD -5038
PRELIMINARY
CPV363M4F
Fast IGBT
1 D1 9 4 6 Q2 D2 12 Q4 D4 18 D3 15 10 Q6 D6 D5 16 3 Q1 Q3 Q5
IGBT SIP MODULE
Features
Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating (1 to 10 kHz) See Fig. 1 for Current vs. Frequency curve
Product Summary
7 13 Output Current in a Typical 5.0 kHz Motor Drive 11 ARMS per phase (3.1 kW total) with TC = 90°C, T J = 125°C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 115% (See Figure 1) 19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar
transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2
Absolute Maximum Ratings
Parameter
VCES I C @ T C = 25°C I C @ T C = 100°C I CM I LM I F @ TC = 100°C I FM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Fo...