MMBT5551

SSMMDD TTyyppee Features High Voltage Transistors Pb-Free Packages are Available Transistors NPN Transistors MMBT5551 (KMBT5551) SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0.15 +0.02 -0.02 +0.21.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Collector Power Dissipation Junction and storage temperature Symbol VCBO VCEO VEBO IC Pc TJ, Tstg Rating 180 160 6 0.6 300 -55 to +150 Unit V V V A mW 0-0.1 +0.10.68 -0.1 1. Base 2. Emitter 3. Collector Electrical Characteristics Ta = 25 Parameter Symbol Testconditions Collector-base breakdown voltage VCBO IC = 100uA, I E = 0 Collector-emitter breakdown voltage * VCEO IC = 1.0 mA, IB = 0 Emitter-base breakdown voltage VEBO IE = 10uA, I C = 0 Collector cutoff current ICBO VCB = 120 V, IE = 0 Emitter cutoff current IEBO VEB = 4.0 V, IC = 0 IC = 1.0 mA, VCE = 5 V DC current gain * hFE IC = 10 mA, VCE = 5 V IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage * VCE(sat) IC = 50 mA, IB = 5.0 mA Base-emitter saturation voltage * VBE(sat) IC = 50 mA, IB = 5.0 mA Transiston frequency fT VCE=10V,IC=10mA,f=100MHz * Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%. ■ Classification of hfe(2) Type Range Marking MMBT5551 100-300 MMBT5551-L 100-200 G1 MMBT5551-H 200-300 Min Typ Max Unit 180 V 160 V 6V 50 nA 50 nA 80 100 300 50 0.5 ...