MMBT5551
NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications.
Absolute Maximum Ratings (Ta...
MMBT5551
NPN Silicon Epitaxial Planar
Transistors for high voltage amplifier applications.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Tamb=25 OC Parameter
DC Current Gain at VCE=5V, IC=1mA at VCE=5V, IC=10mA at VCE=5V, IC=50mA
Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=10µA Collector Cutoff Current at VCB=120V Emitter Cutoff Current at VEB=4V Collector Saturation Voltage at IC=10mA, IB=1mA at IC=50mA, IB=5mA Base Saturation Voltage at IC=10mA, IB=1mA at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=10V, IC=10mA, f=100MHz Collector Base Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=5V, IC=200µA, RG=2KΩ, f=30Hz…15KHz Thermal Resistance Junction to Ambient
Symbol VCEO VCBO VEBO IC Ptot Tj TS
SOT-23 Plastic Package
Value
Unit
160 V
180 V
6V
600 mA
200 mW
150 OC
-55 to +150
OC
Symbol
hFE hFE hFE V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
VCE sat VCE sat
VBE sat VBE sat
fT
CCBO
NF RthA
Min.
80 80 30 160
180
6
-
-
-
100
-
-
Max.
250
-
-
-
50
50
0.15 0.2
1 1 300
6
8 200
Unit
V
V
V
nA
nA
V V
V V MHz
pF
dB K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/11/2005
MMBT5551
SEMTECH ELECTRONICS LTD...