MMBT5550

SMD Type Transistors Features NPN Silicon High Voltage Transistors MMBT5550 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current -continuous Total device dissipation FR-5 board *1 @TA = 25 Derate above 25 Thermal resistance, junction-to-ambient Total device dissipation alumina substrate *2 @TA = 25 derate above 25 Thermal resistance, junction-to-ambient Junction and storage temperature * 1. FR-5 = 1.0 X 0.75 X 0.062 in. * 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. Symbol VCEO VCBO VEBO IC PD RèJA PD RèJA TJ, Tstg Rating 140 160 6 600 225 1.8 556 300 2.4 417 -55 to +150 Unit V V V mA mW mW/ /W mW mW/ /W 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector www.kexin.com.cn 1 SMD Type MMBT5550 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector?emitter breakdown voltage * V(BR)CEO IC = 1.0 mA, IB = 0 Collector?base breakdown voltage V(BR)CBO IC = 100 ìA, IE = 0 Emitter ?base breakdown voltage V(BR)EBO IE = 10 ìA, IC = 0 Collector cutoff current ICBO VCB = 100 V, IE = 0 VCB = 100 V, IE = 0, Ta = 100 Emitter cutoff current IEBO VEB = 4.0 V, IC = 0 IC = 1.0 mA, VCE = 5 V DC current gain hFE IC = 10 mA, VCE = 5 V IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage IC = 10 mA, IB = 1.0 mA VCE(sat) IC ...