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PE42430 Dataheets PDF



Part Number PE42430
Manufacturers Peregrine Semiconductor
Logo Peregrine Semiconductor
Description SP3T Reflective RF Switch
Datasheet PE42430 DatasheetPE42430 Datasheet (PDF)

Product Description The PE42430 is a HaRP™-enhanced reflective SP3T RF switch developed on the UltraCMOS® process technology. This tiny general purpose switch is ideal for WLAN and bluetooth applications in the 2.4 - 2.5 GHz bands as well as general broadband switching applications. It is comprised of three RF ports and has low insertion loss and high isolation. An on-chip CMOS decode logic facilitates a three-pin CMOS control interface. Unlike competitive solutions, there is no need for blockin.

  PE42430   PE42430


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Product Description The PE42430 is a HaRP™-enhanced reflective SP3T RF switch developed on the UltraCMOS® process technology. This tiny general purpose switch is ideal for WLAN and bluetooth applications in the 2.4 - 2.5 GHz bands as well as general broadband switching applications. It is comprised of three RF ports and has low insertion loss and high isolation. An on-chip CMOS decode logic facilitates a three-pin CMOS control interface. Unlike competitive solutions, there is no need for blocking capacitors when using the PE42430. pSemi’s HaRP™ technology enhancements deliver high linearity and exceptional harmonics performance. It is an innovative feature of the UltraCMOS® process, providing performance superior to GaAs with the economy and integration of conventional CMOS. Product Specification PE42430 UltraCMOS® SP3T Reflective RF Switch 100 – 3000 MHz Features  HaRP™-enhanced UltraCMOS® device  Low insertion loss  Typical 0.45 dB @ 1 GHz  Typical 0.55 dB @ 2.5 GHz  IIP3: Typical +66 dBm  P0.1dB Compression: Typical +30 dBm  Excellent ESD tolerance of 4500V HBM and 250V MM on all ports  No external VDD required. VDD is derived from switch control inputs  Package type: 8-lead 1.5 x 1.5 mm DFN Figure 1. Functional Diagram RFC ESD RF1 ESD RF2 ESD RF3 ESD CMOS Control/Driver and ESD V1 V2 V3 71-0086-01 Figure 2. Package Type 8-lead 1.5 x 1.5 mm DFN Document No. DOC-181142-2 │ www.psemi.com ©2010-2023 pSemi Corporation. All rights reserved. Page 1 of 11 PE42430 Product Specification Table 1. Electrical Specifications1: Nominal @ 25°C, V1, V2 or V3 = 3V/5V (ZS = ZL = 50 Ω ) Electrical Parameter Path Condition Min Typ Max Operating Frequency 100 3000 Insertion Loss 100 to 1000 MHz RFC-RFX 1000 to 3000 MHz 2400 to 2500 MHz 0.45 0.56 0.65 0.9 0.55 0.8 Isolation 100 to 1000 MHz RFX-RFX 1000 to 3000 MHz 35 40 23 28 2400 to 2500 MHz 25 30 Isolation 100 to 1000 MHz RFC-RFX 1000 to 3000 MHz 2400 to 2500 MHz 34 40 23 28 25 30 Return Loss (Active Port) 100 to 1000 MHz 22 RFX 1000 to 3000 MHz 16 2400 to 2500 MHz 18 Return Loss (Common Port) 100 to 1000 MHz 22 RFC 1000 to 3000 MHz 16 2400 to 2500 MHz 18 Input 0.1 dB compression 2 RFC-RFX 100 to 3000 MHz 30 IIP3 RFC-RFX 100 to 3000 MHz 66 IIP2 RFC-RFX 100 to 3000 MHz 100 Switching Time 3 Turn on Time 4 50% CTRL to 90% or 10% of final value 50% CTRL to 90% or 10% of RF 500 1.5 2.0 Video Feedthrough 5 10 Notes: 1. Specifications under min and max nominal conditions 2. Please refer to Maximum Input Power (50 Ω ) in Table 4. 3. Switching time is measured while the part is powered on and one of the control pins is switching state. 4. Turn on time is defined as the time it takes the part to go from an unpowered state to 90% RF voltage. Max power can only be applied after the part is turned on/ 5. Video feedthrough is measured by terminating all ports and measuring peak transients while switching logic state. Unit MHz dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm nS µS mV ©2010-2023 pSemi Corporation. All rights reserved. Page 2 of 11 Document No. DOC-18114-2 │ UltraCMOS® RFIC Solutions PE42430 Product Specification Table 3. Electrical Specifications: Min/Max Performance @ -40 to +85°C, V1, V2 or V3 = 3.0V to 5.5V (ZS = ZL = 50 Ω ) Electrical Parameter Operating Frequency Insertion Loss Isolation Isolation Path Condition 100 to 1000 MHz RFC-RFX 1000 to 3000 MHz 2400 to 2500 MHz 100 to 1000 MHz RFX-RFX 1000 to 3000 MHz 2400 to 2500 MHz 100 to 1000 MHz RFC-RFX 1000 to 3000 MHz 2400 to 2500 MHz Min Typ Max Unit 100 3000 MHz 0.45 0.65 dB 0.65 0.95 dB 0.55 0.85 dB 35 40 dB 23 28 dB 25 30 dB 34 40 dB 23 28 dB 25 30 dB Document No. DOC-18114-2 │ www.psemi.com ©2010-2023 pSemi Corporation. All rights reserved. Page 3 of 11 Figure 3. Pin Configuration (Top View) Pin 1 Indicator RFC 1 N/C 2 V1 3 RF1 4 Exposed Grou9nd Paddle DGND 8 RF3 7 V3 6 V2 5 RF2 Table 3. Pin Descriptions Pin # Pin Name Description 1 RFC* RF Common 2 N/C No Connect 3 V1 Switch Control Input, CMOS logic level 4 RF1* RF I/O 5 RF2* RF I/O 6 V2 Switch Control Input, CMOS Logic Level 7 V3 Switch Control Input, CMOS Logic Level 8 RF31 RF I/O Paddle GND Exposed Ground Paddle. Ground for Proper Device Operation Note *: RF pins 1, 4, 5 and 8 must be at 0 VDC. The RF pins do not require DC blocking capacitors for proper operation if the 0 VDC requirement is met. PE42430 Product Specification Table 4. Operating Ranges Parameter Symbol Min Typ Max Units IDD Power Supply Current VCTRL Control Voltage High VCTRL Control Voltage Low IDD 130 230 µA VIH 3 5.5 V VIL 0 0.6 V Operating temperature range TOP -40 Maximum Input Power (50 Ω) CW @ +85°C Pin CW @ +25°C +85 °C +27 dBm +30 dBm Table 5. Absolute Maximum Ratings Symbol Parameter/Conditions Min Max TST Storage.


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