RF Digital Attenuator
PE42522
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–26.5 GHz
Features
• Broad frequency s...
Description
PE42522
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 9 kHz–26.5 GHz
Features
Broad frequency support from 9 kHz to 26.5 GHz
Figure 1 PE42522 Functional Diagram
High port to port isolation
RFC
▪ 63 dB @ 3 GHz
▪ 58 dB @ 7.5 GHz
▪ 39 dB @ 13.5 GHz
▪ 28 dB @ 20 GHz
RF1
RF2
▪ 22 dB @ 26.5 GHz
HaRP™ technology enhanced
50Ω
50Ω
▪ Fast settling time ▪ No gate and phase lag
CMOS Control Driver
▪ No drift in insertion loss and phase
Improved high frequency insertion loss and return loss performance with external matching
V1 VSS_EXT
High ESD performance of 3.0 kV HBM on all pins
Packaging – 29-lead 4 × 4 mm LGA
Applications
Test and measurement Microwave backhaul Radar
Product Description
The PE42522 is a HaRP™ technology-enhanced absorptive SPDT RF switch that supports a broad frequency range from 9 kHz to 26.5 GHz. This broadband general purpose switch offers excellent isolation, high linearity performance and has exceptional settling time making this device ideal for many broadband wireless applications. No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE42522 is manufactured on pSemi’s UltraCMOS® process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate.
pSemi’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the ec...
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