SS110FH

SMD Type Schottky Diodes SS110FH Diodes ■ Features ● High Breakdown Voltage ● Low Turn-on Voltage ● Guard Ring Construction for Transient Protection ■ Absolute Maximum Ratings Ta = 25℃ 12 PIN DESCRIPTION 1 Cathode 2 Anode Weight：17.6mg，0.00062 o z Simplified outline SOD-123FH Parameter Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IO Forward Continuous Current IF Repetitive Peak Forward Current @tp=1s,Duty Cycle < 50% IFRM Forward Surge Forward Current @ tp=10ms IFSM Power Dissipation PD Thermal Resistance Junction to Ambient (Note.1) RθJA Junction Temperature TJ Storage temperature range Tstg Note.1 Part mounted on FR-4 board with recommended pad layout ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Reverse breakdown voltage V(BR)R IR= 100 uA VF1 IF= 0.1 mA Forward voltage VF2 IF= 10mA VF3 IF= 250 mA IR1 VR=1.5 V IR2 VR=1.5 V , TJ=60℃ IR3 VR=10 V Reverse voltage leakage current (Note.1) IR4 VR=10 V , TJ=60℃ IR5 VR=50 V IR6 VR=50 V , TJ=60℃ IR7 VR=75 V IR8 VR=75 V , TJ=60℃ Capacitance between terminals VR= 0 V, f= 1 MHz CT VR= 1 V, f= 1 MHz Note.1 Short duration test pulse used to minimize self-heating effect. ■ Marking Marking XH Rating 100 75 150 350 750 200 500 125 -55 to 150 Unit V mA mW ℃/W ℃ Min Typ Max Unit 100 0.25 0.45 V 1 0.5 5 0.8 7.5 uA 2 15 5 20 10 pF 6 www.kexin.com.cn 1 SMD Type D...