Document
Ordering number:ENN5990B
N-Channel Silicon MOSFET
CPH6403
Load Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive.
Package Dimensions
unit:mm 2151A
[CPH6403]
0.2
0.05 2.9 6 5 4 0.15
0.6 0.6 1.6 2.8
1
2
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions
0.7 0.9
0.2
3 0.95
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
Ratings 20 ±10 6 24 1.6 150 –55 to +150
Unit V V A A W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=1mA, VGS=0 VDS=20V, VGS=0 VGS=±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=3A ID=3A, VGS=4V ID=1A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz 0.5 6.3 9 28 38 700 200 150 38 52 Conditions Ratings min 20 1 ±10 1.3 typ max Unit V µA µA V S mΩ mΩ pF pF pF
Marking : KC
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2100TS (KOTO) TA-2075 No.5990-1/4
CPH6403
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A VDS=10V, VGS=10V, ID=6A IS=6A, VGS=0 Ratings min typ 14 90 90 100 24 1.5 3.2 0.87 1.2 max Unit ns ns ns ns nC nC nC V
Switching Time Test Circuit
VIN VIN PW=10µs D.C.≤1% VDD=10V ID=3A RL=3.3Ω
4V 0V
D
VOUT
G
CPH6403 P.G 50Ω
S
3.5V
3.0V
12
ID - VDS
2.0V
12
ID - VGS
VDS=10V
10
10
4.0V
Drain Current, ID – A
2.5V
Drain Current, ID – A
8
8
6
6
1.5V
4
75°
2
C
25 °C
0.2 0.4 0.6 0.8 1.0 1.2
4
VGS=1.0V
0 0 0.5 1.0 1.5 2.0 2.5 3.0
0 0
Ta=
1.4 1.6
2
–25
°C
1.8
2.0
Drain-to-Source Voltage, VDS – V
100
Gate-to-Source Voltage, VGS – V
80 70
| yf s | - I D
VDS=10V
R DS(on) - VGS
ID=3A
Forward Transfer Admittance, | yfs | – S
7 5 3 2
Ta=25°C
Static Drain-to-Source On-State Resistance, RDS(on) – mΩ
2
60 50 40 30 20 10 0
ID=1A
10 7 5 3 2
Ta=
°C –25
C 75°
25°C
1.0 0.1
2
3
5
7
1.0
2
3
5
7
10
0
2
4
6
8
10
12
Drain Current, ID – A
Gate-to-Source Voltage, VGS – V
No.5990-2/4
CPH6403
60
R DS(on) - Ta
Static Drain-to-Source On-State Resistance, RDS (on) – mΩ
50
40
1A I D=
=2.5 ,VGS
Forward Current, IF – A
V
2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
I F - VSD
VGS=0
20
10
0 -50
-25
0
25
50
75
100
125
150
0.01 7 5 3 2 0.001 0.2
0.3
0.4
0.5
Ta
0.6
=7
25° C –25 °C
0.7 0.8
5°C
30
A,VG I D=3
4V S=
0.9
1.0
1.1
Ambient Temperature, Ta – ˚C
10000 7 5 3 2
Diode Forward Voltage, VSD – V
10 9
Ciss,Coss,Crss - VDS
f=1MHz Gate-to-Source Voltage, VGS – V
VGS - Qg
VDS=10V ID=6A
8 7 6 5 4 3 2 1
Ciss, Coss, Crss – pF
1000 7 5 3 2 100 7 5 3 2 10 0 2 4 6 8 10 12 14 16
Ciss
Coss
Crss
18
20
0
0
5
10
15
20
25
Drain-to-Source Voltage, VDS – V
1000 7 5
Total Gate Charge, Qg – nC
SW Time - I D
VDD=10V VGS=4V Drain Current, ID – A
5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
A S O
I DP =24A
<10µs
Switching Time, SW Time – ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2
100µs 1m s
10m s
td(off)
tf
tr
I D =6A
100
DC o pe rat
ms
td(on)
Operation in this area is limited by RDS(on).
ion
0.01 0.1
Ta=25°C 1 Pulse Mounted on a ceramic board (900mm2×0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3
Drain Current, ID – A
1.8
Drain-to-Source Voltage, VDS – V
P D - Ta
M
Allowable Power Dissipation, PD – W
1.6 .