CPH6312

Ordering number : ENN6934 CPH6312 P-Channel Silicon MOSFET CPH6312 High-Speed Switching Applications Preliminary Features Package Dimensions unit : mm 2151A [CPH6312] 6 5 4 0.6 0.05 1.6 2.8 0.2 2.9 0.15 Low ON-resistance. High-speed switching. 4V drive. 1 2 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.4 0.7 0.9 0.2 3 0.95 0.6 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Ratings -30 ± 20 --5 -20 1.6 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Conditions ID=-1mA, VGS=0 VDS=--30V, VGS=0 VGS=± 16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--3A ID=-3A, VGS=--10V ID=-1.5A, VGS=--4.5V ID=-1.5A, VGS=--4V Ratings min --30 --1 ± 10 --1.2 3.6 5.2 41 62 70 53 87 98 --2.6 typ max Unit V µA µA V S mΩ mΩ mΩ Marking : JN Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extrem...