CPH6306

Ordering number:ENN6348 P-Channel Silicon MOSFET CPH6306 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2151A [CPH6306] 0.2 0.05 2.9 6 5 4 0.15 0.6 1 2 3 0.95 0.6 1.6 2.8 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) www.DataSheet4U.com 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Conditions 0.7 0.9 0.2 Ratings –60 ±20 –1.8 –7.2 1.6 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–60V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–1A ID=–1A, VGS=–10V ID=–0.8A, VGS=–4V VDS=–20V, f=1MHz VDS=–20V, f=1MHz VDS=–20V, f=1MHz –1.0 1.6 2.3 300 400 270 70 20 400 560 Conditions Ratings min –60 –10 ±10 –2.4 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : JG Continued on next page. Any and all SA...