B1155

Power Transistors 2SB1155 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1706 21.0±0.5 16.2±0.5 s Features q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –130 –80 –7 –25 –15 80 3 150 –55 to +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A VCE = –2V, IC = –8A IC = –7A, IB = – 0.35A IC = –15A, IB = –1.5A IC = –7A, IB = – 0.35A IC = –15A, IB = –1.5A VCE = –10V, IC = – 0.5A, f = 10MHz IC = –7A, IB1 = – 0.7A, IB2 = 0.7A, VCC = –50V 12.5 3.5 15.0±0.2 0.7 Solder Dip Unit: mm 15.0±0.3 11.0±0.2 φ3.2±...