H5N5005PL

H5N5005PL Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance: RDS(on) = 0.070 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω) Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A) Avalanche ratings Built-in fast recovery diode: trr = 220 ns typ Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D REJ03G0419-0400 Rev.4.00 May 13, 2009 1 2 3 G Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note3 Pch Note2 θch-c Tch Tstg 1. Gate 2. Drain (Flange) 3. Source S Ratings 500 ±30 60 240 60 240 30 270 0.463 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A W °C/W °C °C REJ03G0419-0400 Rev.4.00 May 13, 2009 Page 1 of 6 H5N5005PL Electrical Characteristics Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance Reverse transfer capa...