S-LP2305DSLT1G

LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V RDS(ON), [email protected], Ids@"3.5A = 68 mΩ RDS(ON), [email protected], Ids@"3A = 81 mΩ RDS(ON), [email protected], Ids@"2A = 118 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements . S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2305DSLT1G S-LP2305DSLT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 Ordering Information Device LP2305DSLT1G S-LP2305DSLT1G LP2305DSLT3G S-LP2305DSLT3G Marking P5S P5S Shipping 3000/Tape&Reel 10000/Tape&Reel Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 8 Gate-Source Voltage VGS ± 8 Continuous Drain Current Pulsed Drain Current 1) ID -3.5 IDM -12 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 Total Device Dissipation FR–5 Board TA = 25°C PD 1100 Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature Unit V A oC mW Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Value 110 Unit ℃/W Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LP2305DSLT1G , S-LP2305DSLT1G ELECTRICAL...