P-Channel MOSFET
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(O...
Description
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
Ordering Information
Device
Marking
LP2301BLT1G
0B
Shipping 3000/Tape & Reel
LP2301BLT3G
0B
10,000/Tape & Reel
LP2301BLT1G
3
1 2
SOT– 23 (TO–236AB)
3D
G 1 S 2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current 1) Maximum Power Dissipation
TA = 25oC TA = 75oC
IDM PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing
RqJC RqJA
Limit -20 ±8 -2.8 -8 0.9 0.57 -55 to 150
140
Unit V
A
W oC oC/W
Rev .O 1/5
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Static
Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero ...
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