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LP2301BLT1G

LRC

P-Channel MOSFET

LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(O...


LRC

LP2301BLT1G

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LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device Marking LP2301BLT1G 0B Shipping 3000/Tape & Reel LP2301BLT3G 0B 10,000/Tape & Reel LP2301BLT1G 3 1 2 SOT– 23 (TO–236AB) 3D G 1 S 2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current 1) Maximum Power Dissipation TA = 25oC TA = 75oC IDM PD Operating Junction and Storage Temperature Range TJ, Tstg Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing RqJC RqJA Limit -20 ±8 -2.8 -8 0.9 0.57 -55 to 150 140 Unit V A W oC oC/W Rev .O 1/5 ELECTRICAL CHARACTERISTICS Parameter Symbol Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero ...




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