P-Channel MOSFET
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@...
Description
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON) ● S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC
● We declare that the material of product are Halogen Free and compliance with RoHS requirements.
Ordering Information
Device
LP2301ALT1G S-LP2301ALT1G
LP2301ALT3G S-LP2301ALT3G
Marking 01A
01A
Shipping 3000/Tape& Reel
10000/Tape& Reel
LP2301ALT1G S-LP2301ALT1G
3
1 2
SOT– 23
3
1 2
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Tj=150℃)* Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature Storage Temperature Range
TA=25℃ TA=70℃
TA=25℃ TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol VDSS VGSS
ID
IDM
PD
TJ Tstg
RθJA
Limit -20
±8
-2.0
-1.6
-10
0.7
0.45
-55 to 150
-55 to 150
Typical
Maximum
100 175
e * The device mounted on 1in2 FR4 board with 2 oz copper
Unit V V
A
A
W
℃ ℃
℃/W
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LP2301ALT1G , S-LP2301ALT1G
ELECTRICAL CHARACTERISTICS
Symbol Parameter
Limit
STATIC V(BR)DSS VGS(th) IGSS IDSS
RDS(ON)
VSD
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leaka...
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