Small Signal MOSFET
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT723
Features
...
Description
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT723
Features
Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate Minimum Breakdown Voltage Rating of 30 V We declare that the material of product is ROHS compliant
and halogen free.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Applications
Level Shifters Level Switches Low Side Load Switches Portable Applications
LNTK4003M3T5G S-LNTK4003M3T5G
3
1 SOT-723
2
Drain 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
Steady TA = 25°C State
TA = 85°C Steady State
VDSS VGS ID
PD
30 ±20 0.5 0.37 0.44
Unit V V A
W
Gate 1
2 Source
Continuous Drain Current (Note 1)
Power Dissipation (Note 1)
t < 5 s TA = 25°C TA = 85°C
t<5s
ID PD
0.56 0.40 0.545
A W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM 1.7 A
TJ, −55 to °C Tstg 150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
IS 1.0 A TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implie...
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