LNTK4003M3T5G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 V, 0.56 A, Single, N−Channel, Gate ESD Protection, SOT723 Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected Gate Minimum Breakdown Voltage Rating of 30 V We declare that the material of product is ROHS compliant and halogen free. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Applications Level Shifters Level Switches Low Side Load Switches Portable Applications LNTK4003M3T5G S-LNTK4003M3T5G 3 1 SOT-723 2 Drain 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady TA = 25°C State TA = 85°C Steady State VDSS VGS ID PD 30 ±20 0.5 0.37 0.44 Unit V V A W Gate 1 2 Source Continuous Drain Current (Note 1) Power Dissipation (Note 1) t < 5 s TA = 25°C TA = 85°C t<5s ID PD 0.56 0.40 0.545 A W Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature IDM 1.7 A TJ, −55 to °C Tstg 150 Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS 1.0 A TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implie...