S-LNTK3043PT5G

LESHAN RADIO COMPANY, LTD. Power MOSFET 20 V, 285 mA, P−Channel with ESD Protection, SOT−723 Features Enables High Density PCB Manufacturing 44% Smaller Footprint than SC−89 and 38% Thinner than SC−89 Low Voltage Drive Makes this Device Ideal for Portable Equipment Low Threshold Levels, VGS(TH) < 1.3 V Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels Using the Same Basic Topology These are Pb−Free Devices S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Applications Interfacing, Switching High Speed Switching Cellular Phones, PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State tv5s Steady State tv5s TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 20 V ±10 V 255 185 mA 285 440 mW 545 Continuous Drain Current (Note 2) Power Dissipation (Note 2) Steady State TA = 25°C TA = 85°C TA = 25°C ID PD 210 mA 155 310 mW Pulsed Drain Current tp = 10 ms IDM Operating Junction and Storage Temperature TJ, TSTG 400 −55 to 150 mA °C Source Current (Body Diode) (Note 2) IS 286 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 seconds)...