Document
LESHAN RADIO COMPANY, LTD.
PNP General Purpose
Transistor
TheLNST3906F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium.
Features
• hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space • This is a Pb−Free Device • S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
LNST3906F3T5G S-LNST3906F3T5G
COLLECTOR 3
1 BASE
2 EMITTER LNST3906F3T5G
3
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
Symbol VCEO VCBO VEBO IC
Value −40 −40 −5.0 −200
Unit Vdc Vdc Vdc mAdc
12 SOT−1123 CASE 524AA STYLE 1
MARKING DIAGRAM
Characteristic
Total Device Dissipation, TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Symbol PD
(Note 1) RqJA
(Note 1)
Max
290 2.3
432
Unit
mW mW/°C
°C/W
3M
3 = Device Code M = Date Code
Total Device Dissipation, TA = 25°C Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Lead 3
PD 347 mW (Note 2) 2.8 mW/°C
RqJA (Note 2)
360
°C/W
RYJL (Note 2)
143
°C/W
ORDERING INFORMATION
Device
Package
Shipping†
LNST3906F3T5G SOT−1123 8000/Tape & Reel S-LNST3906F3T5G (Pb−Free)
Junction and Storage Temperature Range TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Rev.O 1/4
LESHAN RADIO COMPANY, LTD. LNST3906F3T5G ;S-LNST3906F3T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 3.0 Vdc) ON CHARACTERISTICS (Note 3)
DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = −5.0 V, IE = 0 mA, f = 1.0 MHz)
Input Capacitance (VEB = −0.5 V, IE = 0 mA, f = 1.0 MHz)
Noise Figure (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
Rise Time
(IC = −10 mAdc, IB1 = −1.0 mAdc)
Storage Time
(VCC = −3.0 Vdc, IC = −10 mAdc)
Fall Time
(IB1 = IB2 = −1.0 mAdc)
3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Symbol
V(BR)CEO V(BR)CBO V(BR)EBO
ICEX
hFE
VCE(sat)
VBE(sat)
fT Cobo Cibo NF
td tr ts tf
Min
−40 −40 −5.0
−
60 80 100 60 30
− −
−0.65 −
250 − − −
− − − −
Max Unit
− Vdc − Vdc − Vdc −50 nAdc
− − 300 − −
−0.25 −0.4
−0.85 −0.95
−
Vdc Vdc
− MHz 4.5 pF 10.0 pF 4.0 dB
35 ns
35 250 50 ns
0.40 0.35
IC/IB = 10
0.30
VCE(sat) = 150°C
0.25
0.20 25°C
0.15
0.10 −55°C
0.05
0 0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
350 150°C (5.0 V)
300 150°C (1.0 V)
250
200 25°C (5.0 V)
150 25°C (1.0 V) 100 −55°C (5.0 V)
−55°C (1.0 V) 50
0
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN (V)
Rev.O 2/4
VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V)
Cobo, OUTPUT CAPACITANCE (pF)
LESHAN RADIO COMPANY, LTD. LNST3906F3T5G ;S-LNST3906F3T5G
1.1 IC/IB = 10
1.0
0.9 −55°C 0.8
0.7 25°C 0.6
0.5
0.4 150°C
0.3 0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs. Collector Current
1
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0.0001
100 mA
80 mA 60 mA 40 mA
20 mA
IC = 10 mA 0.001
Ib, BASE CURRENT (A) Figure 5. Saturation Region
0.01
Cibo, INPUT CAPACITANCE (pF)
VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V)
1.1 VCE = 2.0 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5
0.4 150°C
0.3 0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT.