S-LN4812LT1G

LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), [email protected], Ids@5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device LN4812LT1G S-LN4812LT1G LN4812LT3G S-LN4812LT3G Marking N48 N48 Shipping 3000/Tape&Reel 10000/Tape&Reel LN4812LT1G S-LN4812LT1G 3 1 2 SOT– 23 (TO–236AB) N - Channel 3 1 2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current 1) PD Maximum Power Dissipation TA = 25oC TA = 75oC 30 ± 20 6 30 1.4 0.8 TJ, Tstg Operating Junction and Storage Temperature Range RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing -55 to 150 50 90 Unit V A W oC oC/W Rev .O 1/4 LESHAN RADIO COMPANY, LTD. LN4812LT1G , S-LN4812LT1G ELECTRICAL CHARACTERISTICS Symbol Parameter Static BVDSS Drain-Source Break...