RCR1525SI

RCR1525SI P-Channel Enhancement Mode Field Effect Transistor z Features VDS (V) = -30 V ID = -3.5 A RDS(ON) = 75mΩ @VGS = -10V RDS(ON) = 90mΩ @VGS = -4.5V High density cell design for low RDS(ON). z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z Pin Configuration z Package Information D 3 12 GS z Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed(1) Power Dissipation Operating and Storage Temperature Range Symbol VDSS VGSS ID PD TJ,TSTG Ratings -30 ±20 -3.5 -16 1 -55 to 150 Unit V V A W ℃ YKKJPD-V3.1 1/4 RCR1525SI z Electrical Characteristics @TA = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 µA -30 -- Zero Gate Voltage Drain Current IDSS VDS = -30 V, VGS = 0 V -- -- Gate - Body Leakage, Forward IGSSF VGS = +20 V, VDS = 0 V -- -- Gate - Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V ON CHARACTERISTICS (2) -- -- Gate Threshold Voltage VGS (th) VDS = VGS, ID = -250 µA -1 -1.4 S...