CPH6001

Ordering number:ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e =11dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ. · Small and slim 6-pin package. · Large allowable collector dissipation (800mW max). 2 Package Dimensions unit:mm 2146A [CPH6001] 0.2 0.05 1.6 2.8 2.9 6 5 4 0.6 0.15 1 2 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.8mm) Conditions 0.7 0.9 0.2 3 0.95 0.6 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : CPH6 Ratings 20 12 2 100 800 150 –55 to +150 Unit V V V mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE1 hFE2 fT Cob Cre | S21e |2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=30mA VCE=5V, IC=70mA VCE=5V, IC=30mA VCB=5V, f=1MHz VCB=5V, f=1MHz VCB=5V, IC=30mA, f=1GHz VCB=5V, IC=7mA, f=1GHz 9 90 70 5 6.7 0.95 0.6 11 1.1 2.0 1.5 GHz pF pF dB dB Conditions Ratings min typ max 1.0 10 180 Unit µA µA Marking : GA Any and all SANYO products described or contained herein do not h...