Document
STM6708Green
Product
SamHop Microelectronics Corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
10 @ VGS=10V 60V 15A
13.5 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous c IDM -Pulsed a c
TC=25°C TC=70°C
EAS Single Pulse Avalanche Energy d
TC=25°C PD Maximum Power Dissipation
TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 60 ±20 15 12 75 225 2.5 1.6
-55 to 150
50
Units V V A A A mJ W W °C
°C/W
Details are subject to change without notice.
1
Sep,05,2014
www.samhop.com.tw
STM6708
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=48V , VGS=0V VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr tD(OFF)
Rise Time Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=7.5A VGS=4.5V , ID=6.5A VDS=10V , ID=7.5A
VDS=25V,VGS=0V f=1.0MHz
VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=7.5A,VGS=10V VDS=30V,ID=7.5A,VGS=4.5V VDS=30V,ID=7.5A, VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=3A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz.
Min Typ Max Units
60 V 1 uA
±100 nA
1 1.6 3
V
8 10 m ohm
11 13.5 m ohm
21 S
4250 247 216
pF pF pF
57 ns 61 ns 173 ns 50 ns 55 nC 26 nC 4.5 nC 14 nC
0.76 1.3
V
Sep,05,2014
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STM6708
ID, Drain Current(A)
60 VGS=4V
50 VGS=4.5V
40 VGS=10V
VGS=3.5V
30
20 VGS=3V 10
0 0 0.5 1 1.5 2 2.5 3
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
18
15
12 VGS=4.5V
9 VGS=10V
6
3
0 1 12 24 36 48 60
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
RDS(on)(mΩ)
RDS(on), On-Resistance Normalized
Ver 1.0
ID, Drain Current(A)
15
12
9 Tj=125 C
6 25 C -55 C
3
0 0 0.9 1.8 2.7 3.6 4.5 5.4
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
2.2
2.0
1.8
VGS=10V ID=7.5A
1.6
1.4
1.2 VGS=4.5V
1.0 ID=6.5A
0 0 25 50 75 100 125 150 Tj(°C )
Tj, Junction Temperature(°C )
Figure 4. On-Resistance Variation with Drain Current and Temperature
Vth, Normalized Gate-Source Threshold Voltage
1.3
1.2
VDS=VGS ID=250uA
1.1
1.0
0.9
0.8
0.7
0.6 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation with Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85 -50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation with Temperature
Sep,05,2014
3 www.samhop.com.tw
STM6708
RDS(on)(m Ω )
48
ID=7.5A
40
32
24 16 125 C
8 75 C
25 C
0 0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
4800 4000
Ciss
3200
2400
1600
800 Crss
Coss
0 0 5 10
15
20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
C, Capacitance(pF)
VGS, Gate to Source Voltage(V)
Is, Source-drain current(A)
20
125 C 10
Ver 1.0
75 C 25 C
1 0 0.3 0.6 0.9 1.2 1.5
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VDS=30V 8 ID=7.5A
6
4
2
0 0 8 16 24 32 40 48 56 64
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Switching Time(ns)
1000 100
TD(off )
Tr Tf
TD(on)
10
VDS=30V,ID=1A VGS=10V
1 1 10
Rg, Gate Resistance(Ω )
100
Figure 11. switching characteristics
4
ID, Drain Current(A)
100 RDS(ON) Limit 10
1
100u1s0us 1ms 10ms
1s DC
0.1 VGS=10V Single Pulse TA=25 C
0.01 0.1 1 10 100
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Aug,29,2014
www.samhop.com.tw
STM6708
V DS
L
RG
20V tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit F igure 13a.
Ver 1.0
V( BR )D S S tp
IAS
Unclamped Inductive Waveforms F igure 13b.
Normalized Transient Thermal Resistance
10
1 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01 0.00001
0.0001
Single Pulse
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
P DM
t1 t2
1. R ӰJA (t)=r (t) * R.