DatasheetsPDF.com

STM6708 Dataheets PDF



Part Number STM6708
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet STM6708 DatasheetSTM6708 Datasheet (PDF)

STM6708Green Product SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 10 @ VGS=10V 60V 15A 13.5 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C T.

  STM6708   STM6708


Document
STM6708Green Product SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 10 @ VGS=10V 60V 15A 13.5 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. S O-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c TC=25°C TC=70°C EAS Single Pulse Avalanche Energy d TC=25°C PD Maximum Power Dissipation TC=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 60 ±20 15 12 75 225 2.5 1.6 -55 to 150 50 Units V V A A A mJ W W °C °C/W Details are subject to change without notice. 1 Sep,05,2014 www.samhop.com.tw STM6708 Ver 1.0 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=48V , VGS=0V VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr tD(OFF) Rise Time Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=7.5A VGS=4.5V , ID=6.5A VDS=10V , ID=7.5A VDS=25V,VGS=0V f=1.0MHz VDD=30V ID=1A VGS=10V RGEN= 6 ohm VDS=30V,ID=7.5A,VGS=10V VDS=30V,ID=7.5A,VGS=4.5V VDS=30V,ID=7.5A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=3A Notes a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%. b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) e.Mounted on FR4 Board of 1 inch2 , 2oz. Min Typ Max Units 60 V 1 uA ±100 nA 1 1.6 3 V 8 10 m ohm 11 13.5 m ohm 21 S 4250 247 216 pF pF pF 57 ns 61 ns 173 ns 50 ns 55 nC 26 nC 4.5 nC 14 nC 0.76 1.3 V Sep,05,2014 2 www.samhop.com.tw STM6708 ID, Drain Current(A) 60 VGS=4V 50 VGS=4.5V 40 VGS=10V VGS=3.5V 30 20 VGS=3V 10 0 0 0.5 1 1.5 2 2.5 3 VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics 18 15 12 VGS=4.5V 9 VGS=10V 6 3 0 1 12 24 36 48 60 ID, Drain Current(A) Figure 3. On-Resistance vs. Drain Current and Gate Voltage RDS(on)(mΩ) RDS(on), On-Resistance Normalized Ver 1.0 ID, Drain Current(A) 15 12 9 Tj=125 C 6 25 C -55 C 3 0 0 0.9 1.8 2.7 3.6 4.5 5.4 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics 2.2 2.0 1.8 VGS=10V ID=7.5A 1.6 1.4 1.2 VGS=4.5V 1.0 ID=6.5A 0 0 25 50 75 100 125 150 Tj(°C ) Tj, Junction Temperature(°C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage 1.3 1.2 VDS=VGS ID=250uA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 5. Gate Threshold Variation with Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(°C ) Figure 6. Breakdown Voltage Variation with Temperature Sep,05,2014 3 www.samhop.com.tw STM6708 RDS(on)(m Ω ) 48 ID=7.5A 40 32 24 16 125 C 8 75 C 25 C 0 0 2 4 6 8 10 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 4800 4000 Ciss 3200 2400 1600 800 Crss Coss 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance C, Capacitance(pF) VGS, Gate to Source Voltage(V) Is, Source-drain current(A) 20 125 C 10 Ver 1.0 75 C 25 C 1 0 0.3 0.6 0.9 1.2 1.5 VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VDS=30V 8 ID=7.5A 6 4 2 0 0 8 16 24 32 40 48 56 64 Qg, Total Gate Charge(nC) Figure 10. Gate Charge Switching Time(ns) 1000 100 TD(off ) Tr Tf TD(on) 10 VDS=30V,ID=1A VGS=10V 1 1 10 Rg, Gate Resistance(Ω ) 100 Figure 11. switching characteristics 4 ID, Drain Current(A) 100 RDS(ON) Limit 10 1 100u1s0us 1ms 10ms 1s DC 0.1 VGS=10V Single Pulse TA=25 C 0.01 0.1 1 10 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Aug,29,2014 www.samhop.com.tw STM6708 V DS L RG 20V tp D .U .T IA S 0 .0 1 + - VDD Unclamped Inductive Test Circuit F igure 13a. Ver 1.0 V( BR )D S S tp IAS Unclamped Inductive Waveforms F igure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve P DM t1 t2 1. R ӰJA (t)=r (t) * R.


STM6716 STM6708 STF8236


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)