Ultrahigh-Speed Switching Applications
Ordering number : ENN6862
CPH3414
N-Channel Silicon MOSFET
CPH3414
Ultrahigh-Speed Switching Applications
Features
• L...
Description
Ordering number : ENN6862
CPH3414
N-Channel Silicon MOSFET
CPH3414
Ultrahigh-Speed Switching Applications
Features
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Package Dimensions
unit : mm 2152A
[CPH3414]
0.4
0.6
3
0.05
1
1.9
2
0.6
1.6
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.7 0.9
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
0.2
Ratings 30 ± 20 2.2 8.8 1.0 150 --55 to +150
0.2
2.9
0.15
Unit V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V Ratings min 30 1 ± 10 1.2 1.4 2.0 115 190 150 270 2.6 typ max Unit V µA µA V S mΩ mΩ
Marking : KP
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or...
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