RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
FEATURES
* Power dissipation
...
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR
TRANSISTORS
TRANSISTOR(
PNP)
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb =25OC)
BCW61C
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified.
Single phase , half wave, 60HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Total device dissipation Junction and storage temperature
SYMBOL VCBO VCEO VEBO IC
PC TJ ,Tstg
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -1mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) Collector cut-off current (VCB= -32V, IE=0) Collector cut-off current (VEB= -4V, IE=0) DC current gain (VCE= -5V, IC= -10mA) DC current gain (VCE= -5V, IC= -2mA) DC current gain (VCE= -1V, IC= -50mA) Collector-emitter saturation voltage (IC= -10mA, IB= -0.25mA) Collector-emitter saturation voltage (IC= -50mA, IB= -1.25mA) Base-emitter saturation voltage (IC= -10mA, IB= -0.25mA) Base-emitter saturation voltage (IC= -50mA, IB= -1.25mA)
Base-emitter v...