BCW61C

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f: 100 MHz –VCE = 5 V; –IC = 10 mA Noise figure at f = 1 kHz –VCE = 5 V; –IC = 200 mA –VCES –VCEO –IC Ptot Tj max. max. max. max. max. 32 V 32 V 200 mA 250 mW 150 °C fT typ. 180 MHz F typ. 2 dB Continental Device India Limited Data Sheet Page 1 of 3 BCW61A BCW61B BCW61C BCW61D RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Base current Total power dissipation up to Tamb = 25 °C Storage temperatu re Junction temperature –VCES –VCE0 –VEB0 –IC –lB Ptot Tstg Tj max. 32 V max. 32 V max. 5 V max. 200 mA max. 50 mA max. 250 mW –55 to +150 °C max. 150 ° C THERMAL RESISTANCE From junction to ambient Rth j–a = 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector–emitter cut–off current VEB = 0; –VCE = 32 V VEB = 0; –VCE = 32 V; Tamb = 150 °C...