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AWB7128 Dataheets PDF



Part Number AWB7128
Manufacturers ANADIGICS
Logo ANADIGICS
Description Small-Cell Power Amplifier Module
Datasheet AWB7128 DatasheetAWB7128 Datasheet (PDF)

FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System • Low Profile Miniature Surface Mount Package; Halogen Free and RoHS Compliant • Multi-Carrier Capability APPLICATIONS • WCDMA, HSDPA and LTE Air Interfaces • FDD and TDD Systems • Picocell, Femtocell, Home Nodes • Customer Premises Equipment (CPE) • Data Cards and Terminals AWB7128 2.545 GHz through 2.69 G.

  AWB7128   AWB7128


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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System • Low Profile Miniature Surface Mount Package; Halogen Free and RoHS Compliant • Multi-Carrier Capability APPLICATIONS • WCDMA, HSDPA and LTE Air Interfaces • FDD and TDD Systems • Picocell, Femtocell, Home Nodes • Customer Premises Equipment (CPE) • Data Cards and Terminals AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 14 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module PRODUCT DESCRIPTION The AWB7128 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low adjacent channel power levels meet the extremely demanding needs of small cell infrastructure architectures. Designed for WCDMA, HSDPA and LTE air interfaces operating in the 2.545 GHz to 2.69 GHz band, the AWB7128 delivers up to +24.5 dBm of LTE (E-TM1.1) power with Supply Voltage an ACPR of -47 dBc. It operates from a convenient +4.2 V supply and provides 28 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. Supply Voltage RF Input Matching Network Bias Control Matching Network Power Detector RF Output Bias Detector Voltage Output Figure 1: Block Diagram 11/2012 AWB7128 VREF 1 GND 2 GND 3 VCC1 4 RFIN 5 GND 6 VDET 7 GND 14 GND 13 GND 12 RFOUT 11 VCC2 10 GND 9 GND 8 GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VREF Reference Voltage 2 GND Ground 3 GND Ground 4 VCC1 Supply Voltage 5 RFIN RF Input 6 GND Ground 7 VDET Detector Voltage 8 GND Ground 9 GND Ground 10 GND Ground 11 VCC2 Supply Voltage 12 RFOUT RF Output 13 GND Ground 14 GND Ground 2 PRELIMINARY DATA SHEET - Rev 1.3 11/2012 AWB7128 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Reference Voltage (VREF) 0 +3.5 V RF Output Power (POUT) - +28 dBm ESD Rating Human Body Model (1) Charged Device Model (2) Class 1C Class IV - MSL Rating (3) 4- Junction Temperature (TJ) - +150 °C Storage Temperature (TSTG) -40 +150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Notes: (1) JEDEC JS-001-2010. (2) JEDEC JESD22-C101D. (3) 260 °C peak reflow. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) 2545 - 2690 MHz Supply Voltage (VCC) +3.2 +4.2 +4.5 V Reference Voltage (VREF) +2.80 +2.85 +2.90 0 - +0.5 V PA "on" PA "shut down" RF Output Power (POUT) - +24.5 - dBm Case Temperature (TC) -40 - +85 °C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 3 PRELIMINARY DATA SHEET - Rev 1.3 11/2012 AWB7128 PARAMETER Table 4: Electrical Specifications (TC = +25 °C, VCC = +4.2 V, VREF = +2.85 V, 50 Ω system) MIN TYP MAX UNIT COMMENTS Gain (2) 26 28 33 dB ACPR (1), (2), (3) @ 10 MHz @ 20 MHz - -47 -45 -58 -54 dBc Power-Added Efficiency (1), (2), (3) 13.5 16 - % Thermal Resistance (RJC) - 24 - °C/W Junction to Case Supply Current (1), (2), (3) - 420 - mA total through VCC pins Quiescent Current (Icq) - 160 175 mA Reference Current Leakage Current - 8 11 mA through VREF pin - 1.5 5 µA VCC = +4.5 V, VREF = 0 V Harmonics 2fO 3fO, 4fO - -52 -46 -60 -50 dBc Input Return Loss 9 13 - dB P1dB - +30.5 - dBm CW tone RF Switching Time (4) Rise Time (PA “off” to “on”) Fall Time (PA “on” to “off”) Spurious Output Level (all spurious outputs) - - 12 4 VCC = +4.2, VREF switched µs between 0 V and +2.85 V POUT ≤ +24.5 dBm In-band load VSWR < 5:1 - - -60 dBc Out-of-band load VSWR < 10:1 Applies over all voltage and temperature operating ranges Load mismatch stress with no permanent degradation or failure 8:1 - VCC = +4.2 V, PIN = 0 dBm - VSWR Applies over full operating temperature range Notes: (1) Measured at 2620 MHz. (2) POUT = +24.5 dBm. (3) E-TM1.1 LTE 10 MHz BW. (4) Rise Time defined from time at which VREF is switched from 0 V to +2.85 V, to time at which the RF output power achieves 90% of the average steady-state “on” level; Fall Time defined from time at which VREF is switched from +2.85 V to 0 V, to time at which the RF output power decreases to 10% of the average steady-state “on” level. 4 PRELIMINARY DATA SHEET - Rev 1.


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