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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System • Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant • Multi-Carrier Capability
APPLICATIONS • WCDMA, HSDPA and LTE Air Interfaces • FDD and TDD Systems • Picocell, Femtocell, Home Nodes • Customer Premises Equipment (CPE) • Data Cards and Terminals
AWB7128
2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
14 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module
PRODUCT DESCRIPTION The AWB7128 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low adjacent channel power levels meet the extremely demanding needs of small cell infrastructure architectures. Designed for WCDMA, HSDPA and LTE air interfaces operating in the 2.545 GHz to 2.69 GHz band, the AWB7128 delivers up to +24.5 dBm of LTE (E-TM1.1) power with
Supply Voltage
an ACPR of -47 dBc. It operates from a convenient +4.2 V supply and provides 28 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Supply Voltage
RF Input
Matching Network
Bias Control
Matching Network
Power Detector
RF Output
Bias
Detector
Voltage
Output
Figure 1: Block Diagram
11/2012
AWB7128
VREF 1 GND 2 GND 3 VCC1 4 RFIN 5 GND 6
VDET 7
GND
14 GND 13 GND 12 RFOUT 11 VCC2 10 GND 9 GND 8 GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 GND Ground
3 GND Ground
4
VCC1
Supply Voltage
5
RFIN
RF Input
6 GND Ground
7
VDET
Detector Voltage
8 GND Ground
9 GND Ground
10 GND Ground
11
VCC2
Supply Voltage
12 RFOUT RF Output
13 GND Ground
14 GND Ground
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PRELIMINARY DATA SHEET - Rev 1.3 11/2012
AWB7128 ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC)
0 +5 V
Reference Voltage (VREF)
0 +3.5 V
RF Output Power (POUT)
- +28 dBm
ESD Rating Human Body Model (1) Charged Device Model (2)
Class 1C Class IV
-
MSL Rating (3)
4-
Junction Temperature (TJ)
-
+150
°C
Storage Temperature (TSTG)
-40 +150 °C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Notes: (1) JEDEC JS-001-2010. (2) JEDEC JESD22-C101D. (3) 260 °C peak reflow.
Table 3: Operating Ranges
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
2545
- 2690 MHz
Supply Voltage (VCC)
+3.2 +4.2 +4.5
V
Reference Voltage (VREF)
+2.80 +2.85 +2.90 0 - +0.5
V
PA "on" PA "shut down"
RF Output Power (POUT)
-
+24.5
-
dBm
Case Temperature (TC)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
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PRELIMINARY DATA SHEET - Rev 1.3 11/2012
AWB7128
PARAMETER
Table 4: Electrical Specifications (TC = +25 °C, VCC = +4.2 V, VREF = +2.85 V, 50 Ω system)
MIN TYP MAX UNIT
COMMENTS
Gain (2)
26 28 33
dB
ACPR (1), (2), (3) @ 10 MHz @ 20 MHz
-
-47 -45 -58 -54
dBc
Power-Added Efficiency (1), (2), (3)
13.5 16
-
%
Thermal Resistance (RJC)
- 24 - °C/W Junction to Case
Supply Current (1), (2), (3)
- 420 -
mA total through VCC pins
Quiescent Current (Icq)
-
160 175
mA
Reference Current Leakage Current
- 8 11 mA through VREF pin
- 1.5 5
µA VCC = +4.5 V, VREF = 0 V
Harmonics 2fO 3fO, 4fO
-
-52 -46 -60 -50
dBc
Input Return Loss
9 13 -
dB
P1dB
- +30.5 -
dBm CW tone
RF Switching Time (4) Rise Time (PA “off” to “on”) Fall Time (PA “on” to “off”)
Spurious Output Level (all spurious outputs)
-
-
12 4
VCC = +4.2, VREF switched µs between 0 V and +2.85 V
POUT ≤ +24.5 dBm In-band load VSWR < 5:1 - - -60 dBc Out-of-band load VSWR < 10:1 Applies over all voltage and temperature operating ranges
Load mismatch stress with no permanent degradation or failure
8:1
-
VCC = +4.2 V, PIN = 0 dBm - VSWR Applies over full operating
temperature range
Notes: (1) Measured at 2620 MHz. (2) POUT = +24.5 dBm. (3) E-TM1.1 LTE 10 MHz BW. (4) Rise Time defined from time at which VREF is switched from 0 V to +2.85 V, to time at which the RF output power achieves 90% of the average steady-state “on” level; Fall Time defined from time at which VREF is switched from +2.85 V to 0 V, to time at which the RF output power decreases to 10% of the average steady-state “on” level.
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PRELIMINARY DATA SHEET - Rev 1.