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AWB7125 Dataheets PDF



Part Number AWB7125
Manufacturers ANADIGICS
Logo ANADIGICS
Description Small-Cell Power Amplifier Module
Datasheet AWB7125 DatasheetAWB7125 Datasheet (PDF)

FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System • Low Profile Miniature Surface Mount Package; Halogen Free and RoHS Compliant • Multi-Carrier Capability APPLICATIONS • LTE, WCDMA and HSDPA Air Interfaces • Picocell, Femtocell, Home Nodes • Customer Premises Equipment (CPE) • Data Cards and Terminals AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier M.

  AWB7125   AWB7125



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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System • Low Profile Miniature Surface Mount Package; Halogen Free and RoHS Compliant • Multi-Carrier Capability APPLICATIONS • LTE, WCDMA and HSDPA Air Interfaces • Picocell, Femtocell, Home Nodes • Customer Premises Equipment (CPE) • Data Cards and Terminals AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 14 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module PRODUCT DESCRIPTION The AWB7125 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low adjacent channel power levels meet the extremely demanding needs of small cell infrastructure architectures. Designed for LTE, WCDMA, HSDPA air interfaces operating in the 860 MHz to 894 MHz band, the AWB7125 delivers up to +24.5 dBm of LTE (E-TM1.1) power with an ACPR of -47 dBc. It operates from a convenient +4.2 V supply and provides 30 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. Vcc1 Vcc2 RF Input Matching Network Bias Network Matching Network Power Detector Vref Detector Output Figure 1: Block Diagram 01/2013 RF Output AWB7125 VREF 1 GND 2 GND 3 VCC1 4 RFIN 5 GND 6 VDET 7 GND 14 GND 13 GND 12 RFOUT 11 VCC2 10 GND 9 GND 8 GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN NAME DESCRIPTION 1 VREF Reference Voltage 2 GND Ground 3 GND Ground 4 VCC1 Supply Voltage 5 RFIN RF Input 6 GND Ground 7 VDET Detector Voltage 8 GND Ground 9 GND Ground 10 GND Ground 11 VCC2 Supply Voltage 12 RFOUT RF Output 13 GND Ground 14 GND Ground 2 PRELIMINARY DATA SHEET - Rev 1.1 01/2013 AWB7125 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Reference Voltage (VREF) 0 +3.5 V RF Output Power (POUT) - +28 dBm ESD Rating Human Body Model (1) Charged Device Model (2) Class 1C Class IV - MSL Rating (3) 4- Junction Temperature (TJ) - +150 °C Storage Temperature (TSTG) -40 +150 °C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Notes: (1) JEDEC JS-001-2010. (2) JEDEC JESD22-C101D. (3) 260 °C peak reflow. PARAMETER Table 3: Operating Ranges MIN TYP MAX UNIT COMMENTS Operating Frequency (f) 860 - 894 MHz Supply Voltage (VCC) +3.2 +4.2 +4.5 V Reference Voltage (VREF) +2.80 +2.85 +2.90 0 - +0.5 V PA "on" PA "shut down" RF Output Power (POUT) - +24.5 - dBm Case Temperature (TC) -40 - +85 °C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. 3 PRELIMINARY DATA SHEET - Rev 1.1 01/2013 AWB7125 Table 4: Electrical Specifications (TC = +25 °C, VCC = +4.2 V, VREF = +2.85 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT COMMENTS Gain (2) 28 30 35 dB ACPR (1), (2), (3) @ 10 MHz @ 20 MHz - -47 -45 -57 -54 dBc Power-Added Efficiency (1), (2), (3) 13.5 16 - % Thermal Resistance (RJC) - 22 - °C/W Junction to Case Supply Current (1), (2), (3) - 420 497 mA total through VCC pins Quiescent Current (Icq) - 140 170 mA Reference Current - 5.0 8 mA through VREF pin Leakage Current - 1.5 5 µA VCC = +5 V, VREF = 0 V Harmonics 2fo 3fo, 4fo - -48 -55 -42 -45 dBc Input Return Loss 9 15 - dB Spurious Output Level (all spurious outputs) POUT ≤ +24.5 dBm In-band load VSWR < 5:1 - - -60 dBc Out-of-band load VSWR < 10:1 Applies over all voltage and temperature operating ranges Load mismatch stress with no permanent degradation or failure 8:1 Notes: (1) ACPR and Efficiency measured at 877 MHz. (2) POUT = +24.5 dBm. (3) LTE E-TM1.1 (10 MHz) - VCC = +4.2 V, PIN = 0 dBm - VSWR Applies over full operating temperature range 4 PRELIMINARY DATA SHEET - Rev 1.1 01/2013 AWB7125 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VREF voltage. VRE F C15 C11 0.1 µF 1000 pF Vcc1C1* C2* C3 C4 100 µF 10 µF 0.1µF 1000 pF RFI N VDET R2 100 KΩ C6 0.1µF 4.7 KΩ R1 1VRE F GND 2 GND 3 Vcc1 RFI N 4 5 GND 6 7VDET * Optional AWB7125 14 GND 13 GND 12 RFOUT 11 Vcc2 10 GND 9 GND C7 1000 pF .


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