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FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System • Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant • Multi-Carrier Capability
APPLICATIONS • LTE, WCDMA and HSDPA Air Interfaces • Picocell, Femtocell, Home Nodes • Customer Premises Equipment (CPE) • Data Cards and Terminals
AWB7125
860 MHz to 894 MHz Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
14 Pin 7 mm x 7 mm x 1.3 mm Surface Mount Module
PRODUCT DESCRIPTION The AWB7125 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power efficiency and low adjacent channel power levels meet the extremely demanding needs of small cell infrastructure architectures. Designed for LTE, WCDMA, HSDPA air interfaces operating in the 860 MHz to 894 MHz band, the AWB7125 delivers up to +24.5 dBm of LTE (E-TM1.1) power with an ACPR of -47 dBc. It operates from a convenient
+4.2 V supply and provides 30 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Vcc1 Vcc2
RF Input
Matching Network
Bias Network
Matching Network
Power Detector
Vref Detector Output
Figure 1: Block Diagram 01/2013
RF Output
AWB7125
VREF 1 GND 2 GND 3 VCC1 4 RFIN 5 GND 6
VDET 7
GND
14 GND 13 GND 12 RFOUT 11 VCC2 10 GND 9 GND 8 GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description PIN NAME DESCRIPTION
1 VREF Reference Voltage
2 GND Ground
3 GND Ground
4
VCC1
Supply Voltage
5
RFIN
RF Input
6 GND Ground
7
VDET
Detector Voltage
8 GND Ground
9 GND Ground
10 GND Ground
11
VCC2
Supply Voltage
12 RFOUT RF Output
13 GND Ground
14 GND Ground
2
PRELIMINARY DATA SHEET - Rev 1.1 01/2013
AWB7125 ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN MAX UNIT
Supply Voltage (VCC)
0 +5 V
Reference Voltage (VREF)
0 +3.5 V
RF Output Power (POUT)
- +28 dBm
ESD Rating Human Body Model (1) Charged Device Model (2)
Class 1C Class IV
-
MSL Rating (3)
4-
Junction Temperature (TJ)
-
+150
°C
Storage Temperature (TSTG)
-40 +150 °C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Notes: (1) JEDEC JS-001-2010. (2) JEDEC JESD22-C101D. (3) 260 °C peak reflow.
PARAMETER
Table 3: Operating Ranges MIN TYP MAX UNIT
COMMENTS
Operating Frequency (f)
860 - 894 MHz
Supply Voltage (VCC)
+3.2 +4.2 +4.5
V
Reference Voltage (VREF)
+2.80 +2.85 +2.90 0 - +0.5
V
PA "on" PA "shut down"
RF Output Power (POUT)
-
+24.5
-
dBm
Case Temperature (TC)
-40 - +85 °C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
3
PRELIMINARY DATA SHEET - Rev 1.1 01/2013
AWB7125
Table 4: Electrical Specifications (TC = +25 °C, VCC = +4.2 V, VREF = +2.85 V, 50 Ω system)
PARAMETER
MIN TYP MAX UNIT COMMENTS
Gain (2)
28 30 35
dB
ACPR (1), (2), (3) @ 10 MHz @ 20 MHz
-
-47 -45 -57 -54
dBc
Power-Added Efficiency (1), (2), (3)
13.5 16
-
%
Thermal Resistance (RJC)
- 22 - °C/W Junction to Case
Supply Current (1), (2), (3)
-
420 497
mA total through VCC pins
Quiescent Current (Icq)
-
140 170
mA
Reference Current
- 5.0 8 mA through VREF pin
Leakage Current
- 1.5 5 µA VCC = +5 V, VREF = 0 V
Harmonics 2fo 3fo, 4fo
-
-48 -55
-42 -45
dBc
Input Return Loss
9 15 -
dB
Spurious Output Level (all spurious outputs)
POUT ≤ +24.5 dBm In-band load VSWR < 5:1 - - -60 dBc Out-of-band load VSWR < 10:1 Applies over all voltage and temperature operating ranges
Load mismatch stress with no permanent degradation or failure
8:1
Notes: (1) ACPR and Efficiency measured at 877 MHz. (2) POUT = +24.5 dBm. (3) LTE E-TM1.1 (10 MHz)
-
VCC = +4.2 V, PIN = 0 dBm - VSWR Applies over full operating
temperature range
4
PRELIMINARY DATA SHEET - Rev 1.1 01/2013
AWB7125
APPLICATION INFORMATION
To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com
Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VREF voltage.
VRE F
C15 C11
0.1 µF
1000 pF
Vcc1C1* C2* C3
C4
100 µF 10 µF 0.1µF 1000 pF
RFI N
VDET R2
100 KΩ
C6 0.1µF
4.7 KΩ R1
1VRE F
GND 2
GND 3
Vcc1 RFI N
4 5
GND 6
7VDET
* Optional
AWB7125
14 GND
13 GND
12 RFOUT 11 Vcc2 10 GND 9 GND
C7 1000 pF
.