CPH3304

Ordering number:EN5987 P-Channel MOS Silicon FET CPH3304 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2152 [CPH3304] 2.9 0.4 0.6 0.2 0.15 3 0 to 0.1 1.6 2.8 1 1.9 2 0.2 0.6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Ratings –30 ±20 –1.6 –6.4 1.0 150 –55 to +150 Unit V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–30V, VGS=0 VGS=±16V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–0.8A ID=–0.8A, VGS=–10V ID=–0.3A, VGS=–4V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –1.0 1.0 1.5 240 400 160 90 38 315 550 Conditions Ratings min –30 –10 ±10 –2.5 typ max Unit V µA µA V S mΩ mΩ pF pF pF Marking : JD Continued on next page. Any and all SANYO products described or contained herein do not ...