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SURS8205T3G Dataheets PDF



Part Number SURS8205T3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Surface Mount Ultrafast Power Rectifiers
Datasheet SURS8205T3G DatasheetSURS8205T3G Datasheet (PDF)

MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features  Small Compact Surface Mountable Package with J−Bend Leads  Rectangular Package for Automated Handling  High Temperature Glass Passivated Junction  Low Forward Voltage Drop (0.74 V Max @ 2.0 A, TJ = 150.

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MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features  Small Compact Surface Mountable Package with J−Bend Leads  Rectangular Package for Automated Handling  High Temperature Glass Passivated Junction  Low Forward Voltage Drop (0.74 V Max @ 2.0 A, TJ = 150C)  AEC−Q101 Qualified and PPAP Capable  SURS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These are Pb−Free Packages* Mechanical Characteristics:  Case: Epoxy, Molded  Weight: 95 mg (Approximately)  Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable  Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds  Polarity: Polarity Band Indicates Cathode Lead  ESD Ratings:  Machine Model = C (> 400 V)  Human Body Model = 3A (> 4 kV) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 2 1 http://onsemi.com ULTRAFAST RECTIFIERS 2 AMPERES, 50−100 VOLTS SMB CASE 403A MARKING DIAGRAM AYWW U2x G G A = Assembly Location Y = Year WW = Work Week U2x = Device Code x= A for MURS205T3G = B for MURS210T3G G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MURS205T3G SMB 2,500 Tape & Reel (Pb−Free) SURS8205T3G MURS210T3G SMB (Pb−Free) SMB (Pb−Free) 2,500 Tape & Reel 2,500 Tape & Reel SURS8210T3G SMB 2,500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MURS205T3/D MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G MAXIMUM RATINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MURA205T3G, SURS8205T3G MURA210T3G, SURS8210T3G Rating Symbol VRRM VRWM VR Value 50 100 Unit V Average Rectified Forward Current @ TL = 150C @ TL = 125C Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IF(AV) IFSM 1.0 2.0 50 A A Operating Junction Temperature TJ −60 to +175 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (TL = 25C) Symbol RqJL Max 13 Unit C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 2.0 A, TJ = 25C) (iF = 2.0 A, TJ = 150C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%. Symbol vF iR trr tfr Value 0.94 0.74 2.0 50 30 20 20 Unit V mA ns ns http://onsemi.com 2 MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (mA) 10 10 7.0 7.0 5.0 5.0 3.0 3.0 2.0 175C 100C 2.0 1.0 1.0 0.7 0.7 0.5 0.5 25C 0.3 0.3 0.2 0.2 175C 100C TC = 25C 0.1 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.3 100 0.4 0.5 0.6 0.7 0.8 0.9 1 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage TJ = 175C 10 1 TJ = 100C 0.01 1.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage 100 TJ = 175C 10 TJ = 100C 1 TJ = 25C 0.1 TJ = 25C 0.1 IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 0.01 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* 0.01 100 0 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Maximum Reverse Current* 100 http://onsemi.com 3 C, CAPACITANCE (pF) MURS205T3G, SURS8205T3G, MURS210T3G, SURS8210T3G 50 45 NOTE: TYPICAL CAPACITANCE AT 40 0 V = 44 V 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance C, CAPACITANCE (pF) 50 45 NOTE: MAXIMUM CAPACITANCE AT 40 0 V = 47 V 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 28 32 36 40 VR, REV.


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