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VS-42CTQ030-N3 Dataheets PDF



Part Number VS-42CTQ030-N3
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-42CTQ030-N3 DatasheetVS-42CTQ030-N3 Datasheet (PDF)

www.vishay.com VS-42CTQ030PbF, VS-42CTQ030-N3 Vishay Semiconductors Schottky Rectifier, 2 x 20 A Base 2 common cathode TO-220AB Anode 2 Anode 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 20 A 30 V 0.38 V 183 mA at 125 °C 150 °C Common cathode 13 mJ FEATURES • 150 °C TJ operation • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance •.

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www.vishay.com VS-42CTQ030PbF, VS-42CTQ030-N3 Vishay Semiconductors Schottky Rectifier, 2 x 20 A Base 2 common cathode TO-220AB Anode 2 Anode 1 Common 3 cathode PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max. TJ max. Diode variation EAS TO-220AB 2 x 20 A 30 V 0.38 V 183 mA at 125 °C 150 °C Common cathode 13 mJ FEATURES • 150 °C TJ operation • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC • Designed and qualified according to JEDEC-JESD47 • Halogen-free according to IEC 61249-2-21 definition (-N3 only) DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICSL SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 20 Apk, TJ = 125 °C (per leg) Range VALUES 40 30 1100 0.38 - 55 to 150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-42CTQ030PbF VS-142TQ030-N3 30 30 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 5 per leg per device IF(AV) Maximum peak one cycle non-repetitive surge current per leg See fig. 7 Non-repetitive avalanche energy per leg IFSM EAS Repetitive avalanche current per leg IAR TEST CONDITIONS 50 % duty cycle at TC = 121 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 3 A, L = 2.90 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical VALUES 20 40 1100 360 13 3 UNITS A mJ A Revision: 29-Aug-11 1 Document Number: 94220 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-42CTQ030PbF, VS-42CTQ030-N3 Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop per leg See fig. 1 VFM (1) Maximum reverse leakage current per leg See fig. 2 Threshold voltage Forward slope resistance Maximum junction capacitance per leg Typical series inductance per leg Maximum voltage rate of change Note (1) Pulse width < 300 μs, duty cycle < 2 % IRM (1) VF(TO) rt CT LS dV/dt 20 A 40 A 20 A 40 A TJ = 25 °C TJ = 125 °C TEST CONDITIONS TJ = 25 °C TJ = 125 °C VR = Rated VR TJ = TJ maximum VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Measured lead to lead 5 mm from package body Rated VR VALUES 0.48 0.57 0.38 0.51 3 183 0.22 6.76 2840 8.0 10 000 UNITS V mA V m pF nH V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case per leg Maximum thermal resistance, junction to case per package Typical thermal resistance, case to heatsink RthJC DC operation RthCS Mounting surface, smooth and greased Approximate weight Mounting torque Marking device minimum maximum Case style TO-220AB VALUES - 55 to 150 UNITS °C 2.0 1.0 °C/W 0.50 2g 0.07 oz. 6 (5) 12 (10) kgf ·cm (lbf · in) 42CTQ030 Revision: 29-Aug-11 2 Document Number: 94220 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IF - Instantaneous Forward Current (A) www.vishay.com VS-42CTQ030PbF, VS-42CTQ030-N3 Vishay Semiconductors 1000 100 TJ = 150 °C TJ = 125 °C 10 TJ = 25 °C 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) 10 000 IR - Reverse Current (mA) 1000 100 10 1 0.1 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 0.01 0 5 10 15 20 25 30 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) 1000 TJ = 25 °C CT - Junction Capacitance (pF) 100 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 ZthJC - Thermal Impedance (°C/W) 1 0.1 0.01 0.00001 Single pulse (thermal resistance) D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 P DM t 1 t 2 Notes: 1. Duty factor D = t1/.


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