www.vishay.com
VBT6045C-E3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra L...
www.vishay.com
VBT6045C-E3
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
K
2 1
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
VBT6045C
PIN 1
K
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 45 V 320 A 0.47 V
150 °C TO-263AB
Diode variations
Common cathode
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM
Operating junction and storage temperature range
TJ, TSTG
VBT6045C 45 60 30
320
-40 to +150
UNIT V A
A...