Dual High Voltage Trench MOS Barrier Schottky Rectifier
Description
V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VF20120C
123
PIN 1
PIN 2
PIN 3
FEATURES
Trench MOS Schottky technology
Low forward voltage ...
