Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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V80170PW
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.51 V at IF = 10 A
TMBS®
FEATURES
Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization:
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