250mW High Speed Switching Array
Small Signal Product
BAV99S
Taiwan Semiconductor
250mW High Speed Switching Array
FEATURES
- Fast switching speed - Hi...
Description
Small Signal Product
BAV99S
Taiwan Semiconductor
250mW High Speed Switching Array
FEATURES
- Fast switching speed - High reverse breakdown voltage rating - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix "G" means
green compound (halogen-free)
MECHANICAL DATA
- Case: SOT-363 small outline plastic package - Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Case material UL flammability rating 94V-0 - Weight: 8 ± 0.5 mg - Marking Code: K1
SOT-363
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current
Non-Repetitive Peak Forward Surge Current
Pulse width = 1 μs Pulse width = 1 s
VRRM IFRM IO
IFSM
85 450 150 4.5 0.5
Junction and Storage Temperature Range
TJ , TSTG
-55 to 150
PARAMETER Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current Junction Capacitance Reverse Recovery Time
IR=2.5μA IF=1.0mA IF=10mA IF=50mA IF=100mA IF=150mA @VR=75V VR=0, f=1.0MHz (Note 1)
Note 1 : Reverse recovery test conditions : IF=IR=10mA, RL=100Ω
SYMBOL V(BR)
VF
IR CJ trr
MIN 75
-
MAX -
0.715 0.855 1.000 1.200 1.250 1.000 1.500 6.000
UNIT mW
V mA mA A oC
UNIT V
V
μA pF ns
Document Number: DS_S1501006
Version: G15
IFm...
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