High Voltage Switching Diode
Small Signal Product
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
High Voltage Switching Diode
FEATURES
- Fast switchin...
Description
Small Signal Product
BAV19 / BAV20 / BAV21
Taiwan Semiconductor
High Voltage Switching Diode
FEATURES
- Fast switching device (trr<4.0ns) - Through-hole device type mounting - Hermetically sealed glasss - Solder hot dip tin (Sn) lead finish - All external surfaces are corrosion resistant and
leads are readily solderable - Packing code with suffix "G" means
Halogen free
MECHANICAL DATA
- Case: DO-35 package - High temperature soldering guaranteed: 260oC/10s - Polarity: Indicated by black cathode band - Weight: 109 ± 4 mg
DO-35 Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Peak Forward Surge Current
Pulse Width = 1 s , Square Wave Pulse Width = 1 μs , Square Wave
PD IFSM
500 1 4
Average Forward Current Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range
IO RθJA TJ , TSTG
200 300 -65 to +200
PARAMETER
BAV19
Reverse Breakdown Voltage
BAV20
IR = 100 μA
BAV21
Forward Voltage Reverse Leakage Current Junction Capacitance
IF = 100 mA
IF = 200 mA
BAV19
VR = 100 V
BAV20
VR = 150 V
BAV21
VR = 200 V
VR = 0 , f = 1.0 MHz
Reverse Recovery Time
(Note 1)
Note 1: Test condition : IF= IR= 30mA , RL=100Ω , IRR=3mA
SYMBOL V(BR)
VF
IR CJ trr
MIN 120 200 250
-
-
-
MAX -
1.00 1.25
100
5 50
UNIT mW
A mA oC/W oC
UNIT
V
V
nA
pF ns
Document Number: DS_S1412015
Version: D14
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ ...
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