200mW High Voltage SMD Switching Diode
BAV19WS/BAV20WS/BAV21WS
Taiwan Semiconductor
200mA, 120-250V High Voltage SMD Switching Diode
FEATURES
● Low power loss...
Description
BAV19WS/BAV20WS/BAV21WS
Taiwan Semiconductor
200mA, 120-250V High Voltage SMD Switching Diode
FEATURES
● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Moisture sensitivity level: level 1, per J-STD-020 ● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter
KEY PARAMETERS
PARAMETER VALUE UNIT
IF(AV) VRRM IFSM VF at IF=200mA TJ MAX. Package
200 mA 120-250 V
2.5 A 1.25 V 150 °C
SOD-323F
Configuration
Single die
MECHANICAL DATA
● Case: SOD-323F ● Molding compound meets UL 94 V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: Indicated by cathode band ● Weight: 4.5 ± 0.5 mg (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL BAV19WS BAV20WS
Marking code on the device
S5 S6
Power dissipation Average forward current
PD 200 IF 200
Repetitive peak reverse voltage
Pulse Width = 1 s ,
Peak forward surge Square Wave
current
Pulse Width = 1 μs ,
Square Wave
VRRM IFSM
120
200 0.5
2.5
Junction temperature range
TJ -65 to +150
Storage temperature range
TSTG
-65 to +150
BAV21WS S7
250
UNIT
mW mA V
A
°C °C
1 Version: I1804
BAV19WS/BAV20WS/BAV21WS
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless ot...
Similar Datasheet