RJS6004WDPK

RJS6004WDPK 600V - 20A - Diode SiC Schottky Barrier Diode Features New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 12 3 Preliminary Datasheet R07DS0897EJ0300 Rev.3.00 Jan 29, 2014 2, 4 13 1. Anode 2. Cathode 3. Anode 4. Cathode Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Per leg/device Electrical Characteristics Symbol VRM IF Note1 IFSM Note1 θj-c Tj Tstg Item Forward voltage Reverse current Reverse recovery time Notes: 1. Per leg/device 2. Per leg Symbol VF Note2 IR Note1 trr Note2 Min ⎯ ⎯ ⎯ Typ 1.5 ⎯ 15 Ratings 600 10/20 60/120 0.9 150 –55 to +150 (Ta = 25°C) Unit V A A °C/W °C °C Max 1.8 10/20 ⎯ (Ta = 25°C) Unit Test conditions V IF = 10 A μA VR = 600 V ns IF = 10 A, di/dt = 300A/μs R07DS0897EJ0300Rev.3.00 Jan 29, 2014 Page 1 of 3 RJS6004WDPK Main Characteristics Forward Current vs. Forward Voltage (Typical) 100 Ta = 25°C 10 150°C Forward Current IF (A) 1 Pulse test Per leg 0.1 01234 Forward Voltage VF (V) Capacitance vs. Reverse Voltage (Typical) 1000 Ta = 25°C Per leg 100 Capaitace Cj (pF) Peak Forward Current IF (A) 10 1 10 100 1000 Reverse Voltage VR (V) IF-Tc Characteristics (Typical) 50 40 Duty = 0.01 30 DC Duty = 0.2 20 Duty = 0.5 10 For Device 0 0 50 100 150 Case Temperature Tc (...