RJS6005WDPK

RJS6005WDPK 600V - 30A - Diode SiC Schottky Barrier Diode Features New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 4 12 3 Preliminary Datasheet R07DS0901EJ0201 Rev.2.01 Jan 31, 2014 2, 4 13 1. Anode 2. Cathode 3. Anode 4. Cathode Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Notes: 1. Per leg/device Symbol VRM IF Note1 IFSM Note1 Tj Tstg Electrical Characteristics Item Forward voltage Reverse current Reverse recovery time Notes: 1. Per leg/device 2. Per leg Symbol VF Note2 IR Note1 trr Note2 Min ⎯ ⎯ ⎯ Typ 1.5 ⎯ 15 Ratings 600 15/30 90/180 150 –55 to +150 (Ta = 25°C) Unit V A A °C °C Max 1.8 10/20 ⎯ (Ta = 25°C) Unit Test conditions V IF = 15 A μA VR = 600 V ns IF = 15 A, di/dt = –300A/μs R07DS0901EJ0201Rev.2.01 Jan 31, 2014 Page 1 of 3 RJS6005WDPK Main Characteristics Forward Current vs. Forward Voltage (Typical) 100 Ta = 25°C 10 150°C Forward Current IF (A) 1 Pulse test Per leg 0.1 01234 Forward Voltage VF (V) Capacitance vs. Reverse Voltage (Typical) 1000 Ta = 25°C Per leg 100 Capaitace Cj (pF) 10 1 10 100 1000 Reverse Voltage VR (V) Peak Forward Current IF (A) Reverse Recovery Time trr (ns) Preliminary Reverse Recovery Time vs. di/dt (Typical) 50 IF = 15 A Ta = 25°C 40 Per leg 30 20 10 0 0 100 200 300 400 500 di/dt (A/µs) IF-Tc C...