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RJP60V0DPM-80

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IGBT

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RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features High breakdown-voltage Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) Short circuit withstand time (6 μs typ.) Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) 1 2...


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RJP60V0DPM-80

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