Silicon N-Channel MOS FET
RJK0631JPE
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• For Automotive application • AEC-Q101 c...
Description
RJK0631JPE
Silicon N Channel Power MOS FET High Speed Power Switching
Features
For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 12 mΩ typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
123
1G
Preliminary Datasheet
R07DS0341EJ0300 Rev.3.00
Jul 24, 2013
2, 4 D
1. Gate 2. Drain 3. Source 4. Drain
S 3
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID ID (pulse) Note1
IDR IDR (pulse) Note1
IAP Note2 EAR Note2 Pch Note3 Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance θch-c: 2.5°C/W
Value 60 ±20 30 120 30 120 18 27.8 60 175
–55 to +150
(Ta = 25°C)
Unit V V A A A A A mJ W °C °C
R07DS0341EJ0300 Rev.3.00 Jul 24, 2013
Page 1 of 6
RJK0631JPE
Preliminary
Electrical Characteristics
Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay t...
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