RJK0632JPD

RJK0632JPD 60 V, 20 A Silicon N Channel MOS FET High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 29 mΩ typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 440 pF typ. Outline Preliminary Datasheet R07DS0342EJ0200 Rev.2.00 Oct 16, 2014 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 2, 4 D 123 1G 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4. AEC-Q101 compliant Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 I Note2 AP E Note2 AR Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics Channel to case thermal impedance θch-c: 6.00°C/W Value 60 ±20 20 80 20 80 14 16.8 25 175 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C °C R07DS0342EJ0200 Rev.2.00 Oct 16, 2014 Page 1 of 6 RJK0632JPD Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge G...