NX5313EK

PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s. APPLICATION FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES Optical output power Po = 13.0 mW Low threshold current lth = 6 mA Differential Efficiency ηd = 0.5 W/A Wide operating temperature range TC = −40 to +85°C InGaAs monitor PIN-PD CAN package φ 5.6 mm Focal point 6.35 mm LD beam angle optimized for 8 degree angled SMF The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PL10529EJ01V0DS (1st edition) Date Published August 2004 CP(K) Printed in Japan  NEC Compound Semiconductor Devices, Ltd. 2004 NX5313 Series PACKAGE DIMENSIONS (UNIT: mm) 0.3+–00..01 110˚±2˚ φ 5.6+–00..0030 φ 4.2±0.1 φ 3.55±0.1 1.0±0.1 BOTTOM VIEW 0.3+–00..10 Focal Point*1 φ2.0 ∆x = 180 µ m Typ ∆y = 0 µ m Typ 1 24 3 PIN CONNECTIONS 6.35±0.5 Reference Plane 4– φ 0.45 φ2.0 NX5313EH 1 (Case) LD 24 PD 3 NX5313EK 1 (Case) LD 2 4 PD 3 15.0±1.0 1.2±0.1 3.87±0.3 2.97±0.2 *1 Focal ...