KI9926A

SMD Type MOSFET ■ Features ● RDS(on) = 0.030 Ω @ VGS = 4.5 V ● RDS(on) = 0.040 Ω @ VGS = 2.5 V. Dual N-Channel MOSFET KI9926A SOP-8 1.50 0.15 +0.040.21 -0.02 D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current *1 TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation *1 TA = 25℃ TA = 70℃ Thermal Resistance,Junction-to-Ambient Maximum Junction-to-Foot (Drain) Jumction temperature and Storage temperature *1 Surface Mounted on 1” x 1” FR4 Board. Symbol VDS VGS ID IDM PD RθJA RθJF Tj.Tstg S1 1 G1 2 S2 3 G2 4 Top View 8 D1 7 D1 6 D2 5 D2 Rating 20 ±12 4.8 3.8 30 1.25 0.8 100 40 -55 to +150 Unit V V A A A W W ℃/W ℃/W ℃ www.kexin.com.cn 11 SSMMDD TTyyppee KI9926A ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance *2 On-State Drain Current *2 Forward Transconductance *2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Diode Conduction) Diode Forward Voltage *2 Symbol Test conditions VDSS VGS = 0 V, ID = 250 μA VDS = 20V , VGS = 0V IDSS VDS = 20V , VGS = 0V , TJ =55℃ VGS(th) VDS = VGS , ID = 250uA IGSS VDS = 0V , VGS = ±12V VGS = 4.5V , ID = 6.5A rDS(on) VGS = 2.5V , ID = 5.4A ID(on) VDS = 5V , VGS = 4.5V gfs VDS = 15V , ID =6A Qg Qgs VDS...