Document
SMD Type
N-Channel 30-V (D-S) MOSFET KI9410DY
MOSFET
■ Features
● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) <0.03 Ω (VGS = 10V) ● RDS(ON) <0.04 Ω (VGS = 5V) ● RDS(ON) <0.05 Ω (VGS = 4.5V)
SOP-8 DDD D
G
SS N-Channel MOSFET
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 ℃)*
TA = 25℃ TA = 70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction) *
Maximum Power Dissipation *
TA = 25℃
TA = 70℃
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient*
t ≤ 10 sec
* Surface Mounted on 1” x 1” FR4 Board.
Symbol VDS VGS
ID
IDM IS
PD
TJ, Tstg RthJA
N/C 1 S2 S3 G4
Top View
8D 7D 6D 5D
Limit 30 ±20 7.0 5.8 30 2.8 2.5 1.6
-55 to 150 50
Unit V
A A A W ℃ ℃/W
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SMD Type
KI9410DY
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Testconditons
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250 μA
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±20 V
Zero Gate Voltage Drain Current
IDSS VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55℃
On-State Drain Currentb *
ID(on) VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 7 A
Drain-Source On-State Resistance *
rDS(on) VGS = 5 V, ID = 4 A
VGS = 4.5 V, ID = 3.5 A
Forward Transconductanceb *
gfs VDS = 15 V, ID = 7 A
Diode Forward Voltageb *
VSD IS = 2 A, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 15 V, VGS = 10 V, ID = 7 A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr VDD = 25 V, RL = 25 Ω
Turn-Off Delay Time
td(off) ID = 1 A, VGEN = 10 V, RG = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr IF = 2 A, di/dt = 100 A/μs
* Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
MOSFET
Min Typ Max Unit
1.0 V
±100 nA
2 μA
25
30 A
0.024 0.030 Ω
0.030 0.040 Ω
0.032 0.050 Ω
15 S
0.72 1.1
V
24 50
2.8 nC
4.6
14 30
10 60
46 150 ns
17 140
60
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