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KI9410DY Dataheets PDF



Part Number KI9410DY
Manufacturers Kexin
Logo Kexin
Description N-Channel MOSFET
Datasheet KI9410DY DatasheetKI9410DY Datasheet (PDF)

SMD Type N-Channel 30-V (D-S) MOSFET KI9410DY MOSFET ■ Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) <0.03 Ω (VGS = 10V) ● RDS(ON) <0.04 Ω (VGS = 5V) ● RDS(ON) <0.05 Ω (VGS = 4.5V) SOP-8 DDD D G SS N-Channel MOSFET ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ℃)* TA = 25℃ TA = 70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) * Maximum Power Dissipation * TA = 25℃ TA = 70℃.

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SMD Type N-Channel 30-V (D-S) MOSFET KI9410DY MOSFET ■ Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) <0.03 Ω (VGS = 10V) ● RDS(ON) <0.04 Ω (VGS = 5V) ● RDS(ON) <0.05 Ω (VGS = 4.5V) SOP-8 DDD D G SS N-Channel MOSFET ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ℃)* TA = 25℃ TA = 70℃ Pulsed Drain Current Continuous Source Current(Diode Conduction) * Maximum Power Dissipation * TA = 25℃ TA = 70℃ Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient* t ≤ 10 sec * Surface Mounted on 1” x 1” FR4 Board. Symbol VDS VGS ID IDM IS PD TJ, Tstg RthJA N/C 1 S2 S3 G4 Top View 8D 7D 6D 5D Limit 30 ±20 7.0 5.8 30 2.8 2.5 1.6 -55 to 150 50 Unit V A A A W ℃ ℃/W www.kexin.com.cn 1 SMD Type KI9410DY ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Testconditons Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA Gate-Body Leakage IGSS VDS = 0 V, VGS = ±20 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55℃ On-State Drain Currentb * ID(on) VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 7 A Drain-Source On-State Resistance * rDS(on) VGS = 5 V, ID = 4 A VGS = 4.5 V, ID = 3.5 A Forward Transconductanceb * gfs VDS = 15 V, ID = 7 A Diode Forward Voltageb * VSD IS = 2 A, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 7 A Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tr VDD = 25 V, RL = 25 Ω Turn-Off Delay Time td(off) ID = 1 A, VGEN = 10 V, RG = 6 Ω Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2 A, di/dt = 100 A/μs * Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. MOSFET Min Typ Max Unit 1.0 V ±100 nA 2 μA 25 30 A 0.024 0.030 Ω 0.030 0.040 Ω 0.032 0.050 Ω 15 S 0.72 1.1 V 24 50 2.8 nC 4.6 14 30 10 60 46 150 ns 17 140 60 www.kexin.com.cn 2 .


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