N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 1/9
N-Channel Enhancem...
Description
CYStech Electronics Corp.
Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTE130N20J3 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP) @ VGS=10V, ID=9A
200V 18A 1.9A 156mΩ
Features
Low Gate Charge Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and halogen-free package
Symbol
MTE130N20J3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTE130N20J3-0-T3-G
Package
Shipping
TO-252 (Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE130N20J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966J3 Issued Date : 2014.12.23 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
Avalanche Current
Avalanche Energy @ L=1mH, ID=3A, VDD=50V
Power Dissipation
TC=25°C TC=100°C
Power Dissipation
TA=25°C TA=70°C
Operating Junction and Storage Temperature
(Note 1) (Note 1)
(Note 3) (Note 4) (Note 4) (Note 3) (Note 3) (Note 1) (Note...
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