Document
CYStech Electronics Corp.
Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE130N20H8 BVDSS ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=9A
200V 11A 156 mΩ(typ)
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package
Symbol
MTE130N20H8
Outline
Pin 1
DFN5×6
G:Gate D:Drain S:Source
Ordering Information
Device MTE130N20H8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTE130N20H8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current
Single Pulse Avalanche Energy @ L=1mH, ID=3Amps, VDD=50V
Repetitive Avalanche Energy
TC=25°C
Power Dissipation
TC=100°C TA=25°C
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
(Note 1)
(Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 3)
(Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2)
Symbol
VDS VGS ID
IDSM IDM IAS EAS EAR PD
PDSM Tj, Tstg
Limits
200 ±20 11
7 2.4 1.9 30 3
4.5
4.5 50 20 2.5 1.6 -55~+150
Unit
V
A
mJ W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol RθJC
RθJA
Value 2.5
50
Unit °C/W °C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C.
4. When mounted on1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad.
.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static BVDSS
∆BVDSS/∆Tj VGS(th) *GFS IGSS
IDSS
200 2.0 -
-
- - V VGS=0V, ID=250μA
0.2 - V/°C Reference to 25°C, ID=250μA
- 4.0 V VDS = VGS, ID=250μA
12 -
S VDS =10V, ID=9A
-
±100
nA VGS=±20V
-
1 25
μA
VDS =180V, VGS =0V VDS =180V, VGS =0V, Tj=125°C
MTE130N20H8
CYStek Product Specification
*RDS(ON)
-
Dynamic *Qg *Qgs *Qgd *td(ON) *tr
*td(OFF) *tf Ciss Coss Crss
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*trr -
*Qrr -
CYStech Electronics Corp.
Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 3/ 9
156 195 mΩ VGS =10V, ID=9A
19 57.2 12.6 35 27.6 14.6 813 85 36 -
nC VDS=160V, ID=11A, VGS=10V ns VDS=100V, ID=11A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz
- 11 - 30 0.84 1.2 80 245 -
A
V IS=10A, VGS=0V
ns nC
VGS=0, IF=10A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTE130N20H8
unit : mm
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 4/ 9
Typical Characteristics
Typical Output Characteristics
30 10V, 9V, 8V, 7V
25
20
VGS=6V
ID, Drain Current(A)
15
10 VGS=5V
5
0
0 2 4 6 8 10 VDS, Drain-Source Voltage(V)
BVDSS, Normalized Drain-Source Breakdown Voltage
Brekdown Voltage vs Ambient Temperature 1.4
1.2
1
0.8
0.6 ID=250μA, VGS=0V
0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage 1.2
VSD, Source-Drain Voltage(V)
RDS(ON), Static Drain-Source On-State Resistance(mΩ)
VGS=6V
100 VGS=10V
1 Tj=25°C
0.8
0.6 Tj=150°C
0.4
RDS(ON), Static Drain-Source OnState Resistance(mΩ)
10 0.01
0.1 1 10 ID, Drain Current(A)
100
Static Drain-Source On-State Resistance vs Gate-Source Voltage
600
500 ID=9A 400
300
200
100
0
0 2 4 6 8 10 VGS, Gate-Source Voltage(V)
RDS(ON), Normalized Static DrainSource On-State Resistance
0.2 0
4 8 12 16 IDR, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
3 VGS=10V, ID=9A
2.5
2
1.5
1
0.5 RDS(ON)@Tj=25°C :156mΩ typ
0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C)
MTE130N20H8
CYSt.