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MTE130N20H8 Dataheets PDF



Part Number MTE130N20H8
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTE130N20H8 DatasheetMTE130N20H8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE130N20H8 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 11A 156 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol MTE130N20H8 Outline Pin 1 DFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTE130N20H8-0-T6-G Pa.

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CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTE130N20H8 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 11A 156 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol MTE130N20H8 Outline Pin 1 DFN5×6 G:Gate D:Drain S:Source Ordering Information Device MTE130N20H8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTE130N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V Continuous Drain Current @TC=100°C, VGS=10V Continuous Drain Current @TA=25°C, VGS=10V Continuous Drain Current @TA=70°C, VGS=10V Pulsed Drain Current @ VGS=10V Avalanche Current Single Pulse Avalanche Energy @ L=1mH, ID=3Amps, VDD=50V Repetitive Avalanche Energy TC=25°C Power Dissipation TC=100°C TA=25°C TA=70°C Operating Junction and Storage Temperature *Drain current limited by maximum junction temperature (Note 1) (Note 1) (Note 1) (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) Symbol VDS VGS ID IDSM IDM IAS EAS EAR PD PDSM Tj, Tstg Limits 200 ±20 11 7 2.4 1.9 30 3 4.5 4.5 50 20 2.5 1.6 -55~+150 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 4) Symbol RθJC RθJA Value 2.5 50 Unit °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The value in any given application depends on the user’s specific board design. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. 3. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. When mounted on1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. . Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS 200 2.0 - - - - V VGS=0V, ID=250μA 0.2 - V/°C Reference to 25°C, ID=250μA - 4.0 V VDS = VGS, ID=250μA 12 - S VDS =10V, ID=9A - ±100 nA VGS=±20V - 1 25 μA VDS =180V, VGS =0V VDS =180V, VGS =0V, Tj=125°C MTE130N20H8 CYStek Product Specification *RDS(ON) - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss - Source-Drain Diode *IS - *ISM - *VSD - *trr - *Qrr - CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 3/ 9 156 195 mΩ VGS =10V, ID=9A 19 57.2 12.6 35 27.6 14.6 813 85 36 - nC VDS=160V, ID=11A, VGS=10V ns VDS=100V, ID=11A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz - 11 - 30 0.84 1.2 80 245 - A V IS=10A, VGS=0V ns nC VGS=0, IF=10A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint MTE130N20H8 unit : mm CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966H8 Issued Date : 2015.03.23 Revised Date : Page No. : 4/ 9 Typical Characteristics Typical Output Characteristics 30 10V, 9V, 8V, 7V 25 20 VGS=6V ID, Drain Current(A) 15 10 VGS=5V 5 0 0 2 4 6 8 10 VDS, Drain-Source Voltage(V) BVDSS, Normalized Drain-Source Breakdown Voltage Brekdown Voltage vs Ambient Temperature 1.4 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 1000 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=6V 100 VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 RDS(ON), Static Drain-Source OnState Resistance(mΩ) 10 0.01 0.1 1 10 ID, Drain Current(A) 100 Static Drain-Source On-State Resistance vs Gate-Source Voltage 600 500 ID=9A 400 300 200 100 0 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) RDS(ON), Normalized Static DrainSource On-State Resistance 0.2 0 4 8 12 16 IDR, Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture 3 VGS=10V, ID=9A 2.5 2 1.5 1 0.5 RDS(ON)@Tj=25°C :156mΩ typ 0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) MTE130N20H8 CYSt.


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