N & P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE130N20FP
Spec. No. : C966FP Issued Date : 2014.05....
Description
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE130N20FP
Spec. No. : C966FP Issued Date : 2014.05.13 Revised Date : 2014.05.15 Page No. : 1/ 8
BVDSS ID @ VGS=10V RDS(ON)@VGS=10V, ID=9A
200V
17A 150 mΩ(typ)
Features
Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Insulating package, front/back side insulating voltage=2500V(AC) RoHS compliant package
Symbol
MTE130N20FP
Outline
TO-220FP
G:Gate D:Drain S:Source
GDS
Ordering Information
Device MTE130N20FP-0-UB-S
Package
TO-220FP (RoHS compliant package)
Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products Product name
MTE130N20FP
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C966FP Issued Date : 2014.05.13 Revised Date : 2014.05.15 Page No. : 2/ 8
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=1mH, ID=3.5 Amps,
VDD=50V
(Note 2)
TC=25°C
(Note 1)
Power Dissipation
TC=100°C TA...
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