Dual N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No. : 1/7
Dual N-...
Description
CYStech Electronics Corp.
Spec. No. : C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No. : 1/7
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTDN9926Q8
BVDSS
ID
20V 6A
Description
RDSON(MAX)
28mΩ
The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=28mΩ@VGS=4.5V, ID=6A
Simple drive requirement Low on-resistance Fast switching speed Capable of 2.5V gate drive Pb-free lead plating package
Equivalent Circuit
MTDN9926Q8
Outline
SOP-8
G:Gate S:Source D:Drain
Ordering Information
Device MTDN9926Q8
Package
SOP-8 (Pb-free package)
MTDN9926Q8
Shipping 3000 pcs / Tape & Reel
Marking 9926SS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=4.5V, TA=25 °C (Note 1) Continuous Drain Current @ VGS=4.5V, TA=70 °C (Note 1) Pulsed Drain Current (Note 2&3)
Total Power Dissipation @ TA=25 °C Linear Derating Factor
Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol VDS VGS ID ID IDM Pd
Tj, Tstg Rth,ja
Limits 20 ...
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