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MTDN9926Q8

CYStech

Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No. : 1/7 Dual N-...


CYStech

MTDN9926Q8

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CYStech Electronics Corp. Spec. No. : C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9926Q8 BVDSS ID 20V 6A Description RDSON(MAX) 28mΩ The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)=28mΩ@VGS=4.5V, ID=6A Simple drive requirement Low on-resistance Fast switching speed Capable of 2.5V gate drive Pb-free lead plating package Equivalent Circuit MTDN9926Q8 Outline SOP-8 G:Gate S:Source D:Drain Ordering Information Device MTDN9926Q8 Package SOP-8 (Pb-free package) MTDN9926Q8 Shipping 3000 pcs / Tape & Reel Marking 9926SS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=4.5V, TA=25 °C (Note 1) Continuous Drain Current @ VGS=4.5V, TA=70 °C (Note 1) Pulsed Drain Current (Note 2&3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) Symbol VDS VGS ID ID IDM Pd Tj, Tstg Rth,ja Limits 20 ...




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