MTDN5820Z6

CYStech Electronics Corp. Spec. No. : C911Z6 Issued Date : 2013.11.28 Revised Date : Page No. : 1/9 20V Common Drain Dual N -Channel Enhancement Mode MOSFET MTDN5820Z6 BVDSS ID VGS=4.5V 20V 11A VGS=4.5V, ID=5.5A 6.0mΩ VGS=4.0V, ID=5.5A 6.0mΩ RDSON (TYP.) VGS=3.7V, ID=5.5A 6.2 mΩ VGS=3.1V, ID=5.5A 6.7 mΩ Description VGS=2.5V, ID=5.5A 7.8 mΩ The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×5-6L package is universally preferred for all commercial-industrial surface mount applications. Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed ESD protected Pb-free lead plating and halogen-free package Equivalent Circuit MTDN5280Z6 Outline TDFN2×5-6L G：Gate S：Source D：Drain MTDN5820Z6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C911Z6 Issued Date : 2013.11.28 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) TA=25 °C, VGS=4.5V TA=70 °C, VGS=4.5V Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) TA=25 °C TA=70 °C Operating Junction and Storage Temperature Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10 sec 2.Pulse width limited by maximum junction ...